Features: ` Harris FSC260R die` total dose: 100 kRAD(Si) within pre-radiation parameter limits` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM typical` neutron: 1013 neutrons/cm2 within pre-radiation parameter limits` photocurrent: 17 nA/RAD(Si)...
MX043G: Features: ` Harris FSC260R die` total dose: 100 kRAD(Si) within pre-radiation parameter limits` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM ty...
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DESCRIPTION | SYMBOL | MAX. | UNIT |
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ 25 |
BVDSS |
200 | Volts |
Drain-to-Gate Breakdown Voltage @ TJ 25, RGS= 1 M | BVDGR | 200 | Volts |
Continuous Gate-to-Source Voltage | VGS | +/-20 | Volts |
Transient Gate-to-Source Voltage | VGSM | +/-30 | Volts |
Continuous Drain Current Tj= 25 Tj= 100 |
ID25 ID100 |
44 28 |
Amps |
Peak Drain Current, pulse width limited by TJmax | IDM | 132 | Amps |
Repetitive Avalanche Current | IAR |
44 | Amps |
Repetitive Avalanche Energy | EAR | tbd | mJ |
Single Pulse Avalanche Energy | EAS | tbd | mJ |
Power Dissipation | PD | 300 | Watts |
Junction Temperature Range | Tj | -55 to +125 | |
Storage Temperature Range | Tstg | -55 to +125 | |
Continuous Source Current (Body Diode) | IS | 44 | Amps |
Pulse Source Current (Body Diode) | ISM | 132 | Amps |
Thermal Resistance, Junction to Case | JC |
0.25 | /W |
Weight | - | grams |