Position: Home  > All Categories> Integrated Circuits (ICs) > MX043J

MX043J

Features: ` Harris FSC260R die` total dose: 100 kRAD(Si) within pre-radiation parameter limits` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM typical` neutron: 1013 neutrons/cm2 within pre-radiation parameter limits` photocurrent: 17 nA/RAD(Si)...

product image

MX043J Picture
See larger image
SeekIC No. : 004431504 Detail

MX043J: Features: ` Harris FSC260R die` total dose: 100 kRAD(Si) within pre-radiation parameter limits` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM ty...

MX043J Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MX043J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Harris FSC260R die
` total dose: 100 kRAD(Si) within pre-radiation parameter limits
` dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical
` dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM typical
` neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
` photocurrent: 17 nA/RAD(Si)/sec typical
` rated Safe Operating Area Curve for Single event Effects
` rugged polysilicon gate cell structure with ultrafast body diode
` low inductance surface mount power package available with "J-leads" (MX043J) or "gullwing-leads" (MX043G)
` very low thermal resistance
` reverse polarity available upon request add suffix "R"st


Specifications

DESCRIPTION SYMBOL MAX. UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25

BVDSS

 200 Volts
Drain-to-Gate Breakdown Voltage @ TJ 25, RGS= 1 M BVDGR 200 Volts
Continuous Gate-to-Source Voltage VGS +/-20 Volts
Transient Gate-to-Source Voltage VGSM +/-30 Volts
Continuous Drain Current Tj= 25
Tj= 100		 ID25
ID100		 44
28		 Amps
Peak Drain Current, pulse width limited by TJmax IDM 132 Amps
Repetitive Avalanche Current IAR
 44 Amps
Repetitive Avalanche Energy EAR tbd mJ
Single Pulse Avalanche Energy EAS tbd mJ
Power Dissipation PD 300 Watts
Junction Temperature Range Tj -55 to +125
Storage Temperature Range Tstg -55 to +125
Continuous Source Current (Body Diode) IS 44 Amps
Pulse Source Current (Body Diode) ISM 132 Amps
Thermal Resistance, Junction to Case JC
 0.25 /W
Weight -   grams



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Switches
US32DMRJ
HBGQ22P-11ET
Memory Cards, Modules
WT32
VTL5C7
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Line Protection, Backups
BX0023
A20B-1008-0550
View more