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MW6S010GNR, MW6S010N, MW6S010NR1

Table of contents:
Info of MW6S010GNR
Info of MW6S010N
Info of MW6S010NR1

MW6S010GNR, MW6S010N, MW6S010NR1 Selling Leads, Datasheet

MFG:Freescale Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SMD D/C:08+

MW6S010GNR, MW6S010N, MW6S010NR1 Datasheet download

Five Points

Part Number: MW6S010NR1

Category: Discrete Semiconductor Products

MFG: Freescale Semiconductor (VA)

Package Cooled: SMD

D/C: 08+

Description: MOSFET RF N-CH 28V 10W TO-270-2

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MW6S010NR1 Parameters

Technical/Catalog Information	MW6S010NR1
Vendor	Freescale Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	28V
Current Rating	125mA
Package / Case	TO-270-2
Packaging	Cut Tape (CT)
Drawing Number	375; 1265-08; NR; 2
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MW6S010NR1 MW6S010NR1 MW6S010NR1CT ND MW6S010NR1CTND MW6S010NR1CT

MW6S010NR1 General Description

Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

MW6S010NR1 Maximum Ratings

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	-0.5. +68	Vdc
Gate-Source Voltage	V_GS	-0.5, +12	Vdc
Total Device Dissipation @ T_C = 25 Derate above 25	P_D	61.4 0.35	W W/
Storage Temperature Range	T_stg	-65 to +175
Operating Junction Temperature	T_J	200

MW6S010NR1 Features

• Typical Two-Tone Performance @ 960 MHz, V_DD = 28 Volts, I_DQ =
      125 mA, P_out = 10 Watts PEP
      Power Gain - 18 dB
      Drain Efficiency - 32%
      IMD - -37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200 Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

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