Transistors RF MOSFET Power HV6 1950MHZ 2W PLD1.5N
MW6S004NT1: Transistors RF MOSFET Power HV6 1950MHZ 2W PLD1.5N
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 2 GHz | Gain : | 18 dB at 1.96 GHz | ||
Output Power : | 4 W | Drain-Source Breakdown Voltage : | 68 V | ||
Gate-Source Breakdown Voltage : | 12 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | PLD-1.5-3 | Packaging : | Reel |
Technical/Catalog Information | MW6S004NT1 |
Vendor | Freescale Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 28V |
Current Rating | 50mA |
Package / Case | PLD-1.5 |
Packaging | Cut Tape (CT) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MW6S004NT1 MW6S004NT1 MW6S004NT1CT ND MW6S004NT1CTND MW6S004NT1CT |