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The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage structure. Its wideband On−Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N−CDMA and W−CDMA.
MW4IC915GNBR1 Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
−0.5. +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Storage Temperature Range
Tstg
-65 to +175
Operating Junction Temperature
TJ
200
MW4IC915GNBR1 Features
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW Output Power • Characterized with Series Equivalent Large−Signal Impedance Parameters • On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On−Chip Current Mirror gm Reference FET for Self Biasing Application(1) • Integrated ESD Protection • N Suffix Indicates Lead−Free Terminations • 200 Capable Plastic Package • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.