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The MW4IC2230 wideband integrated circuit is designed for W-CDMA base station applications. It uses Motorolas newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W-CDMA.
MW4IC2230MBR1 Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +8
Vdc
Storage Temperature Range
Tstg
-65 to +175
Operating Junction Temperature
TJ
175
Input Power
Pin
20
dBm
MW4IC2230MBR1 Features
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power • Characterized with Series Equivalent Large-Signal Impedance Parameters • On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Temperature Compensation with Enable/Disable Function • On-Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1 Connection Diagram
MW4IC915MBR1 Parameters
Technical/Catalog Information
MW4IC915MBR1
Vendor
Freescale Semiconductor
Category
RF and RFID
Package / Case
TO-272-16
Voltage - Supply
26V
Current - Supply
60mA
Gain
30dB
Frequency
750MHz ~ 1GHz
RF Type
Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA
Packaging
Tape & Reel (TR)
Noise Figure
-
P1db
-
Test Frequency
-
Drawing Number
375; 1329-09; ; 16
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
MW4IC915MBR1 MW4IC915MBR1
MW4IC915MBR1 General Description
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorolas newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.
MW4IC915MBR1 Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Storage Temperature Range
Tstg
-65 to +175
Operating Junction Temperature
TJ
175
MW4IC915MBR1 Features
• Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power - 3 Watts Avg. Power Gain - 31 dB Efficiency - 19% Spectral Regrowth @ 400 kHz Offset = -65 dBc Spectral Regrowth @ 600 kHz Offset = -83 dBc EVM - 1.5% • Typical Performance: 860-960 MHz, 26 Volts Output Power - 15 Watts CW Power Gain - 30 dB Efficiency - 44% • On Chip Matching (50 Ohm Input, >3 Ohm Output) • Integrated Temperature Compensation Capability with Enable/Disable Function • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz, Pout = 15 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA • Can Be Bolted or Soldered through a Hole in the Circuit Board for Maximum Thermal Performance • Also Available in Gull Wing for Surface Mount • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.