MTP30P06, MTP30P06V, MTP33N Selling Leads, Datasheet
MFG:IR Package Cooled:TO-220 D/C:08+/09+
MTP30P06, MTP30P06V, MTP33N Datasheet download
Part Number: MTP30P06
MFG: IR
Package Cooled: TO-220
D/C: 08+/09+
MTP30P06, MTP30P06V, MTP33N
- Table of contents:
Info of MTP30P06
Info of MTP30P06V
Info of MTP33N
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About MTP30P06
PDF/DataSheet Download
Datasheet: MTP30P06
File Size: 195585 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP30P06V
PDF/DataSheet Download
Datasheet: MTP30P06V
File Size: 195585 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTP33N10
PDF/DataSheet Download
Datasheet: MTP33N10
File Size: 246166 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTP30P06 General Description
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTP30P06 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 25 |
Vdc VPK |
| Drain Current - Continuous @ 25°C - Continuous@ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
30 19 105 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 0.83 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =30Apk, L = 1.0mH, RG = 25) |
EAS |
450 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.2 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTP30P06 Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
MTP30P06V Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
60 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±15 ±25 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse(tp10 s) |
ID ID IDM |
30 19 105 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 0.83 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL =30 Apk, L = 1.0 mH, RG = 25) |
EAS |
450 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
1.2 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
°C |
MTP30P06V Features
New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
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