MTP10N10E

Features:

• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode - Unclamped Inductive Switching (UIS) Energy Capability Specified at 100°C
• Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	100	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	100	Vdc
GatetoSource Voltage	VGS	± 20	Vdc
Drain Current - Continuous - Pulsed	ID IDM	10 5	Adc
Total Power Dissipation Derate above 25°C	PD	75 0.6	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	65 to 150	°C

Description

This advanced MTP10N10E of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drainto source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP10N10E is particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.