MTP10N10EL

Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 22000 mOhms at 5 V


Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	100	Vdc
DraintoGate Voltage (RGS =1.0 M)	VDGR	100	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	±15 ±20	Vdc VPK
Drain Current - Continuous@ TC = 25°C - Continuous@ 100°C - Single Pulse (tp 10 s)	ID ID IDM	10 6.0 35	Adc Apk
Total Power Dissipation @ TC = 25°C Derate above 25°C	PD	40 0.32 1.75	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS =5.0Vdc IL =10 Apk L =1.0mH, RG = 25	EAS	50	mJ
Thermal Resistance - Junction to Case - Junction to Ambient (1)	RJC RJA RJA	3.13 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

This advanced MTP10N10EL power FET is designed to withstand high energy in the avalanche and commutation modes. The MTP10N10EL also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP10N10EL is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.