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MTP2N80, MTP2P50, MTP2P50E

Table of contents:
Info of MTP2N80
Info of MTP2P50
Info of MTP2P50E

MTP2N80, MTP2P50, MTP2P50E Selling Leads, Datasheet

MFG:MOT Package Cooled:TO-220 D/C:03+

MTP2N80, MTP2P50, MTP2P50E Datasheet download

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Part Number: MTP2N80

MFG: MOT

Package Cooled: TO-220

D/C: 03+

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MTP2P50 General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP2P50 Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	500	Vdc
DraintoGate Voltage (R_GS =1.0 M)	V_DGR	500	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS V_GSM	± 20 ± 40	Vdc VPK
Drain Current - Continuous - Continuous@ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	2.0 1.6 6.0	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	75 0.6	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =100 Vdc, V_GS =10Vdc, PEAK I_L =4.0 Apk, L =10H, R_G = 25)	E_AS	80	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	1.67 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTP2P50 Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature

MTP2P50E General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies,converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature

MTP2P50E Maximum Ratings

Rating	Symbol	Value	Unit
DrainSource Voltage	V_GSS	500	Vdc
DrainGate Voltage (R_GS = 1.0 M)	V_DGR	500	Vdc
GateSource Voltage - Continuous - NonRepetitive (t_p10ms)	V_GS V_GSM	±20 ±40	Vdc Vpk
Drain - Continuous - Continuous @ 100°C - Single Pulse(t_p10 s)	I_D I_D I_DM	2.0 1.6 6.0	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	75 0.6	Watts W/°C
Operating and Storage Temperature Range	T_J,T_stg	55 to 150	°C
Single DraintoSource Avalanche Energy - Starting T_J = 25°C (V_DD = 100 Vdc, V_GS = 10 Vdc, I_L =4.0 Apk, L = 10 mH, R_G = 25)	E_AS	80	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	1.67 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds	T_L	260	°C

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