MMDFS2P102R2G, MMDFS3P303R2G, MMDFS6N303 Selling Leads, Datasheet
MFG:ON Package Cooled:SOP8 D/C:08+
MMDFS2P102R2G, MMDFS3P303R2G, MMDFS6N303 Datasheet download
Part Number: MMDFS2P102R2G
MFG: ON
Package Cooled: SOP8
D/C: 08+
MFG:ON Package Cooled:SOP8 D/C:08+
MMDFS2P102R2G, MMDFS3P303R2G, MMDFS6N303 Datasheet download
MFG: ON
Package Cooled: SOP8
D/C: 08+
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PDF/DataSheet Download
Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMDFS6N303
File Size: 262665 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
The FETKYE product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter,BuckBoost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products.
• HDTMOS Power MOSFET with Low VF
• Lower Component Placement and Inventory Costs along with Board Space Savings
• Logic Level Gate Drive - Can be Driven by Logic ICs
• Mounting Information for SO8 Package Provided
• Applications Information Provided
• R2 Suffix for Tape and Reel (2500 units/13, reel)
• Marking: 6N303
Rating |
Symbol |
Value |
Units |
DraintoSource Voltage |
VDSS |
30 |
V |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
V |
GatetoSource Voltage - Continuous |
VGS |
±20 |
V |
Drain Current - Continuous @ TA = 25°C Drain Current - Single Pulse (tp 10s) |
ID IDM |
6.0 30 |
Adc Apk |
Total Power Dissipation @ TA = 25°C (2) |
PD |
2.0 |
W |
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 ) |
EAS |
325 |
mJ |