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MMD3715A-02, MMDF1300R2, MMDF1N05E

MMD3715A-02, MMDF1300R2, MMDF1N05E Selling Leads, Datasheet

MFG:189  Package Cooled:2000  D/C:2007+

MMD3715A-02, MMDF1300R2, MMDF1N05E Picture

MMD3715A-02, MMDF1300R2, MMDF1N05E Datasheet download

Five Points

Part Number: MMD3715A-02

 

MFG: 189

Package Cooled: 2000

D/C: 2007+

 

 

 
 
 
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  • MMD-10DZ-1R5M-X3

  • Vendor: MAG LAYERS D/C: 0805& Qty: 300 Note: New, Same-Day Ship, Reel(300)  Adddate: 2024-11-22
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  • TechNut Electronics   United
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  • MMDF1N05ER2

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  • MMDF1N05ER2G

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About MMDD110T1

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Datasheet: MMDD110T1

File Size: 157687 KB

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MMDF1300R2 Suppliers

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  • MMD-10DZ-1R5M-X3

  • Vendor: MAG LAYERS D/C: 0805& Qty: 300 Note: New, Same-Day Ship, Reel(300)  Adddate: 2024-11-22
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  • TechNut Electronics   United
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  • MMDF1N05ER2

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-22
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  • Umos Electronic(HK) CO.,LTD.   China
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  • MMDF1N05ER2G

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About MMDF1300R2

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Datasheet: MMDF1300R2

File Size: 45129 KB

Manufacturer: ONSEMI [ON Semiconductor]

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MMDF1N05E Suppliers

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  • MMDF1N05ER2

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-22
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

  • MMDF1N05ER2G

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-22
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

  • MMD-10DZ-1R5M-X3

  • Vendor: MAG LAYERS D/C: 0805& Qty: 300 Note: New, Same-Day Ship, Reel(300)  Adddate: 2024-11-22
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  • TechNut Electronics   United
    Contact: Mr.Josh  
    Tel: 0-801-529-8126
    Fax: 0-801-649-2705
    (14)

  • MMDF1N05ER2

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-22
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

  • MMDF1N05ER2G

  • Vendor: ON Pack: SOIC D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-11-22
  • Inquire Now
  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About MMDF1N05E

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Datasheet: MMDF1N05E

File Size: 173630 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MMDF1N05E General Description

MiniMOSETM devices are an advanced series of power MOSFETs which utilize Motorola's TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided
• IDSS Specified at Elevated Temperature

MMDF1N05E Maximum Ratings

Rating
Symbol
Value
Units
DraintoSource Voltage
VDS
50
V
GatetoSource Voltage - Continuous
VGS
±20
V
Drain Current - Continuous
- Pulsed
ID
IDM
2.0
10
A
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C(VDD=25 V,VGS=10 V,IL = 2 Apk)
EAS
300
mJ
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Total Power Dissipation @ TA = 25°C
PD
2.0
W
Thermal Resistance Junction to Ambient (1)
RJA
62.5
°C/W
Maximum Temperature for Soldering,
Time in Solder Bath
TL
260
10
°C
Sec
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

MMDF1N05E Connection Diagram

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