MMDF3N06HDR2G, MMDF3N06VL, MMDF3N06VLR2 Selling Leads, Datasheet
MFG:ON Package Cooled:SOP8 D/C:08+
MMDF3N06HDR2G, MMDF3N06VL, MMDF3N06VLR2 Datasheet download
Part Number: MMDF3N06HDR2G
MFG: ON
Package Cooled: SOP8
D/C: 08+
MMDF3N06HDR2G, MMDF3N06VL, MMDF3N06VLR2
- Table of contents:
Info of MMDF3N06HDR2G
Info of MMDF3N06VL
Info of MMDF3N06VLR2
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About MMDD110T1
PDF/DataSheet Download
Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
Download : Click here to Download
About MMDF3N06VL
PDF/DataSheet Download
Datasheet: MMDF3N06VL
File Size: 262665 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
About MMDD110T1
PDF/DataSheet Download
Datasheet: MMDD110T1
File Size: 157687 KB
Manufacturer:
Download : Click here to Download
MMDF3N06VL Maximum Ratings
|
Rating |
Symbol |
Value |
Units |
| DraintoSource Voltage |
VDSS |
60 |
V |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
V |
| GatetoSource Voltage - Continuous |
VGS |
±15 |
V |
| Drain Current - Continuous @ TA = 25°C Drain Current - Continuous @ TA = 100°C Drain Current - Single Pulse (tp 10s) |
ID ID IDM |
3.3 0.7 10 |
Adc Apk |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Total Power Dissipation @ TA = 25°C(1) |
PD |
2.0 |
W |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.3 Apk, L = 10 mH, RG = 25 ) |
EAS |
54 |
mJ |
| Thermal Resistance Junction to Ambient (1) |
RJA |
62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 0.0625, from case for 10 seconds |
TL |
260 |
°C |
MMDF3N06VL Features
New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Miniature SO8 Surface Mount Package Saves Board Space
• Mounting Information for SO8 Package Provided
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