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MJD122-1, MJD122G, MJD122T4

Table of contents:
Info of MJD122-1
Info of MJD122G
Info of MJD122T4

MJD122-1, MJD122G, MJD122T4 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:IPAK TO-251 D/C:TO

MJD122-1, MJD122G, MJD122T4 Datasheet download

Five Points

Part Number: MJD122G

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: IPAK TO-251

D/C: TO

Description: TRANS DARL NPN 100V 5A DPAK

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MJD122-1 General Description

The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance.

MJD122-1 Maximum Ratings

Symbol	Conditions		Value	Unit
		PNP	MJD122
		NPN	MJD127
V_CBO	Collector-Base Voltage (IE = 0)		100	V
V_CEO	Collector-Emitter Voltage (IB = 0)		100	V
V_EBO	Emitter-Base Voltage (IC = 0)		5	V
I_C	Collector Current		5	A
I_CM	Collector Peak Current (tp < 5 ms)		8	A
I_B	Base Current		0.1	A
P_tot	Total Dissipation at T^c = 25		20	W
T_stg	Storage Temperature		-65 to 200
T_J	Max. Operating Junction Temperature		150

MJD122-1 Features

`STMicroelectronics PREFERRED SALESTYPES
`LOW BASE-DRIVE REQUIREMENTS
`INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
`THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX "-1")
`SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
`ELECTRICALLY SIMILAR TO TIP122 AND TIP127

MJD122-1 Typical Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER

MJD122G Parameters

Technical/Catalog Information	MJD122G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	8A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	2V @ 16mA, 4A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	10A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD122G MJD122G MJD122GOS ND MJD122GOSND MJD122GOS

MJD122T4 Parameters

Technical/Catalog Information	MJD122T4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	5A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	2V @ 16mA, 4A
Frequency - Transition	-
Current - Collector Cutoff (Max)	10A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD122T4 MJD122T4 497 2469 2 ND 49724692ND 497-2469-2

MJD122T4 General Description

The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance.

MJD122T4 Maximum Ratings

Symbol	Conditions		Value	Unit
		PNP	MJD122
		NPN	MJD127
V_CBO	Collector-Base Voltage (IE = 0)		100	V
V_CEO	Collector-Emitter Voltage (IB = 0)		100	V
V_EBO	Emitter-Base Voltage (IC = 0)		5	V
I_C	Collector Current		5	A
I_CM	Collector Peak Current (tp < 5 ms)		8	A
I_B	Base Current		0.1	A
P_tot	Total Dissipation at T^c = 25		20	W
T_stg	Storage Temperature		-65 to 200
T_J	Max. Operating Junction Temperature		150

MJD122T4 Features

MJD122T4 Typical Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER

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