MJD112/L Selling Leads, Price trend, MJD112/L DataSheet download, circuit diagram from SeekIC.com

Features: ·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.·Low Collector-Emitter Saturation Voltage.·Straight Lead (IPAK, L Suffix)·Complementary to MJD117/L.Specifications CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter...

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SeekIC No. : 004421528 Detail

MJD112/L: Features: ·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.·Low Collector-Emitter Saturation Voltage.·Straight Lead (IPAK, L Suffix)·Complementary to MJD117/L.Specifications CHARACTER...

MJD112/L Data Sheet

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Part Number:: MJD112/L
Supply Ability:: 5000

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Upload time: 2024/6/3

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MJD112 evaluate
Transistors Darlington 2A 100V Bipolar
MJD112-001 evaluate
Transistors Darlington 2A 100V Bipolar
MJD112-1G evaluate
US $.18 - .32 / Piece

Transistors Darlington 2A 100V Bipolar Power NPN

Product Details

Description

Features:

·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.
·Low Collector-Emitter Saturation Voltage.
·Straight Lead (IPAK, "L" Suffix)
·Complementary to MJD117/L.

Specifications

CHARACTERISTIC		SYMBOL	RATING	UNIT
Collector-Base Voltage		V_CBO	100	V
Collector-Emitter Voltage		V_CEO	100	V
Emitter-Base Voltage		V_EBO	5	V
Collector Current	DC	I_C	2	A
Collector Current	Pulse	I_C	4	A
Base Current	DC	I_B	50	mA
Collector Power Dissipation	T_a=25	P_C	1.0	W
Collector Power Dissipation	T_c=25	P_C	20	W
Junction Temperature		T_j	150
Storage Temperature Range		T_stg	-55 150

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MJD112/L

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