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MJD112-001

Transistors Darlington 2A 100V Bipolar

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SeekIC No. : 00218000 Detail

MJD112-001: Transistors Darlington 2A 100V Bipolar

MJD112-001 Data Sheet

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Part Number:
MJD112-001
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 100 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V Maximum DC Collector Current : 4 A
Maximum Collector Cut-off Current : 20 uA Power Dissipation : 20 W
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : DPAK-SL Packaging : Tube    

Description

Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum DC Collector Current : 4 A
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 20 uA
Power Dissipation : 20 W
Package / Case : DPAK-SL


Parameters:

Technical/Catalog InformationMJD112-001
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)2A
Power - Max20W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic2V @ 8mA, 2A
Frequency - Transition25MHz
Current - Collector Cutoff (Max)20A
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJD112 001
MJD112001
MJD112 001OS ND
MJD112001OSND
MJD112-001OS



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