MJD112-1G, US $ .18-.32 , ON Semiconductor, MJD112-1G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00216655 Detail

MJD112-1G: Transistors Darlington 2A 100V Bipolar Power NPN

MJD112-1G Data Sheet

US $ .18~.32 / Piece | Get Latest Price

Part Number:: MJD112-1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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MJD112 evaluate
Transistors Darlington 2A 100V Bipolar
MJD112/L evaluate
Features: ·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.·Low Collector-Emitter Saturation...
MJD112-001 evaluate
Transistors Darlington 2A 100V Bipolar

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	NPN
Collector- Emitter Voltage VCEO Max :	100 V	Emitter- Base Voltage VEBO :	5 V
Collector- Base Voltage VCBO :	100 V	Maximum DC Collector Current :	4 A
Maximum Collector Cut-off Current :	20 uA	Power Dissipation :	20 W
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	DPAK-SL	Packaging :	Tube

Description

Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum DC Collector Current : 4 A
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 20 uA
Power Dissipation : 20 W
Package / Case : DPAK-SL

Parameters:

Technical/Catalog Information	MJD112-1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	2A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 8mA, 2A
Frequency - Transition	25MHz
Current - Collector Cutoff (Max)	20A
Mounting Type	Through Hole
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD112 1G MJD1121G MJD112 1GOS ND MJD1121GOSND MJD112-1GOS

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MJD112-1G

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