Transistors Darlington 2A 100V Bipolar Power NPN
MJD112-1G: Transistors Darlington 2A 100V Bipolar Power NPN
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Configuration : | Single | Transistor Polarity : | NPN | ||
Collector- Emitter Voltage VCEO Max : | 100 V | Emitter- Base Voltage VEBO : | 5 V | ||
Collector- Base Voltage VCBO : | 100 V | Maximum DC Collector Current : | 4 A | ||
Maximum Collector Cut-off Current : | 20 uA | Power Dissipation : | 20 W | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | DPAK-SL | Packaging : | Tube |
Technical/Catalog Information | MJD112-1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 2A |
Power - Max | 20W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 8mA, 2A |
Frequency - Transition | 25MHz |
Current - Collector Cutoff (Max) | 20A |
Mounting Type | Through Hole |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJD112 1G MJD1121G MJD112 1GOS ND MJD1121GOSND MJD112-1GOS |