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Epitaxial-base Technology for use in medium power linear and switching applications.
MJB32B Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
-80
V
VCEO
Collector-Emitter Voltage (IB = 0)
-80
V
VEBO
Emitter-Base Voltage (IC = 0)
-5
V
IC
Collector Current
-3
A
ICM
Collector Peak Current
-5
A
IB
Base Current
-1
A
Ptot
Total Dissipation at Tcase 25 Tamb 25
40 2
W W
Tstg
Storage Temperature
-65 to 150
TJ
Max. Operating Junction Temperature
150
MJB32B Typical Application
·LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
MJB41C Parameters
Technical/Catalog Information
MJB41C
Vendor
ON Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
6A
Power - Max
65W
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 600mA, 6A
Frequency - Transition
3MHz
Current - Collector Cutoff (Max)
700A
Mounting Type
Surface Mount
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging
Tube
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
MJB41C MJB41C MJB41COS ND MJB41COSND MJB41COS
MJB41C Maximum Ratings
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
100
Vdc
CollectorBase Voltage
VCB
100
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous − Peak
IC
6.0 10
Adc
BaÎse CÎurreÎnt
LB
2.0
Adc
Total Power Dissipation @ TC = 25 Derate above 25
PD
65 0.52
Watts W/
Total Power Dissipation @ TC = 25 Derate above 25
PD
2.0 0.016
Watts W/
Unclamped Inductive Load Energy (Note 1.)
E
62.5
mJ
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to 150
MJB41C Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Lead Formed Version in 16 mm Tape & Reel ("T4" Suffix) • Electrically the Same as TIP41 and T1P42 Series