MJB42C

Transistors Bipolar (BJT) 6A 100V 65W PNP

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SeekIC No. : 00214315 Detail

MJB42C: Transistors Bipolar (BJT) 6A 100V 65W PNP

floor Price/Ceiling Price

Part Number:
MJB42C
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single
Maximum Operating Frequency : 3 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : D2PAK
Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 30
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : D2PAK


Features:

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Lead Formed Version in 16 mm Tape & Reel ("T4" Suffix)
• Electrically the Same as TIP41 and T1P42 Series



Specifications

Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
100
Vdc
CollectorBase Voltage
VCB
100
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
− Peak
IC
6.0
10
Adc
BaÎse CÎurreÎnt
LB
2.0
Adc
Total Power Dissipation
@ TC = 25
Derate above 25
PD
65
0.52
Watts
W/
Total Power Dissipation
@ TC = 25
Derate above 25
PD
2.0
0.016
Watts
W/
Unclamped Inductive Load Energy
(Note 1.)
E
62.5
mJ
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to 150



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