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MJ400, MJ4032, MJ4033

Table of contents:
Info of MJ400
Info of MJ4032
Info of MJ4033

MJ400, MJ4032, MJ4033 Selling Leads, Datasheet

MFG:MOT/ON Package Cooled:MOT D/C:03+

MJ400, MJ4032, MJ4033 Datasheet download

Five Points

Part Number: MJ400

MFG: MOT/ON

Package Cooled: MOT

D/C: 03+

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MJ4032 General Description

The MJ4035 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case.

It is inteded for use in general purpose and amplifier applications.

The complementary PNP type is the MJ4032.

MJ4032 Maximum Ratings

Symbol	Conditions		Value	Unit
		PNP	MJ4032
		NPN	MJ4035
V_CBO	Collector-Base Voltage (IE = 0)		100	V
V_CEO	Collector-Emitter Voltage (IB = 0)		100	V
V_EBO	Emitter-Base Voltage (IC = 0)		5	V
I_C	Collector Current		16	A
I_B	Base Current		0.5	A
P_tot	Total Dissipation at Tc £ 25		150	W
T_stg	Storage Temperature		-65 to 200
T_J	Max. Operating Junction Temperature		200

For PNP types voltage and current values are negative.

MJ4032 Features

·SGS-THOMSON PREFERRED SALESTYPES
·COMPLEMENTARY PNP - NPN DEVICES
·MONOLITHIC DARLINGTON CONFIGURATION
·INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

MJ4032 Typical Application

·GENERAL PURPOSE SWITCHING
·GENERAL PURPOSE AMPLIFIERS

MJ4033 General Description

·With TO-3 package
·Respectively complement to type MJ4030/4031/4032
·DARLINGTON
·High DC current gain

MJ4033 Maximum Ratings

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
V_CBO	Collector-Base Voltage	MJ4033	Open emitter	60	V
		MJ4034		80
		MJ4035		100
V_CEO	Collector-Emitter Voltage	MJ4033	Open base	60	V
		MJ4034		80
		MJ4035		100
V_EBO	Emitter-Base Voltage		Open collector	5	V
I_C	Collector Current-Continuous			16	A
I_CM	Collector Current-Peak			20	A
I_B	Base Current			0.5	A
P_C	Collector Power Dissipation		T_C=25	150	W
T_j	Junction Temperature			200
T_stg	Storage Temperature Range			-55~150

MJ4033 Typical Application

·For use as output devices in complementary general purpose amplifier applications

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