MJ4035

Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-3
Power Dissipation : 150 W
Maximum DC Collector Current : 16 A


Features:

·SGS-THOMSON PREFERRED SALESTYPES
·COMPLEMENTARY PNP - NPN DEVICES
·MONOLITHIC DARLINGTON CONFIGURATION
·INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE




Application

·GENERAL PURPOSE SWITCHING
·GENERAL PURPOSE AMPLIFIERS




Specifications

Symbol	Conditions		Value	Unit
		PNP	MJ4032
		NPN	MJ4035
VCBO	Collector-Base Voltage (IE = 0)		100	V
VCEO	Collector-Emitter Voltage (IB = 0)		100	V
VEBO	Emitter-Base Voltage (IC = 0)		5	V
IC	Collector Current		16	A
IB	Base Current		0.5	A
Ptot	Total Dissipation at Tc £ 25		150	W
Tstg	Storage Temperature		-65 to 200
TJ	Max. Operating Junction Temperature		200

For PNP types voltage and current values are negative.




Description

The MJ4035 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case.

MJ4035 is inteded for use in general purpose and amplifier applications.

The complementary PNP type is the MJ4032.