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·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ2500/2501
MJ3000 Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
MJ3000
Open emitter
60
V
MJ3001
80
VCEO
Collector-emitter voltage
MJ3000
Open base
60
V
MJ3001
80
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
0.2
A
PD
Total power dissipation
TC=25
150
W
Tj
Junction temperature
200
Tstg
Storage temperature
-55~200
MJ3000 Typical Application
·For use as output devices in complementary general purpose amplifier applications
MJ3001 Parameters
Technical/Catalog Information
MJ3001
Vendor
STMicroelectronics
Category
Discrete Semiconductor Products
Transistor Type
NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
10A
Power - Max
150W
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 3V
Vce Saturation (Max) @ Ib, Ic
-
Frequency - Transition
-
Current - Collector Cutoff (Max)
1mA
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Packaging
Bulk
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
MJ3001 MJ3001 497 2393 ND 4972393ND 497-2393
MJ3001 General Description
The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.