Transistors Darlington NPN Darlington Power LTB 9-2009
MJ3001: Transistors Darlington NPN Darlington Power LTB 9-2009
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Configuration : | Single | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 80 V | Emitter- Base Voltage VEBO : | 5 V |
Collector- Base Voltage VCBO : | 80 V | Maximum DC Collector Current : | 10 A |
Power Dissipation : | 150 W | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-3 |
Packaging : | Bulk |
Symbol |
Parameter |
Value |
Unit | |
PNP |
MJ2501 | |||
NPN |
MJ3001 | |||
VCBO |
Collector-base Voltage (IE = 0) |
80 |
V | |
VCEO |
Collector-emitter Voltage (IB = 0) |
80 |
V | |
VEBO |
Emitter-base Voltage (IC = 0) |
5 |
V | |
IC |
Collector Current |
10 |
A | |
IB |
Base Current |
0.2 |
A | |
Ptot |
Total Dissipation at Tc £ 25 oC |
150 |
W | |
Tstg |
Storage Temperature |
-65 to 200 |
||
Tj |
Max. Operating Junction Temperature |
200 |
The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.
The complementary NPN type is the MJ3001.
Technical/Catalog Information | MJ3001 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 150W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
Vce Saturation (Max) @ Ib, Ic | - |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 1mA |
Mounting Type | Chassis Mount |
Package / Case | TO-204, TO-3 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MJ3001 MJ3001 497 2393 ND 4972393ND 497-2393 |