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MJ21195, MJ21195G, MJ21196

Table of contents:
Info of MJ21195
Info of MJ21195G
Info of MJ21196

MJ21195, MJ21195G, MJ21196 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:09+

MJ21195, MJ21195G, MJ21196 Datasheet download

Five Points

Part Number: MJ21195

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-3P

D/C: 09+

Description: TRANS PWR NPN 16A 250V TO3

Price Break

300

Unit Price

2.38000

Extended Price

714.00

(All prices are in USD) Prices for reference only

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MJ21195 Parameters

Technical/Catalog Information	MJ21195
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	16A
Power - Max	250W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 8A, 5V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 800mA, 8A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ21195 MJ21195 MJ21195OS ND MJ21195OSND MJ21195OS

MJ21195 Maximum Ratings

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	V_CEO	250	Vdc
CollectorBase Voltage	V_CBO	400	Vdc
EmitterBase Voltage	V_EBO	5	Vdc
CollectorEmitter Voltage - 1.5 V	V_CEX	400	Vdc
Collector Current - Continuous - Peak (1)	I_C	16 30	Adc
Base Current - Continuous	I_B	5	Adc
Total Power Dissipation @ T_C = 25 Derate Above 25	P_D	250 1.43	Watts W/
Operating and Storage Junction Temperature Range	T_J, T_stg	65 to +200

MJ21195 Typical Application

• Total Harmonic Distortion Characterized
• High DC Current Gain hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second

MJ21195G Parameters

Technical/Catalog Information	MJ21195G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	16A
Power - Max	250W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 8A, 5V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 800mA, 8A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJ21195G MJ21195G MJ21195GOS ND MJ21195GOSND MJ21195GOS

MJ21196 Parameters

Technical/Catalog Information	MJ21196
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	16A
Power - Max	250W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 8A, 5V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 800mA, 8A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ21196 MJ21196 MJ21196OS ND MJ21196OSND MJ21196OS

MJ21196 Maximum Ratings

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	V_CEO	250	Vdc
CollectorBase Voltage	V_CBO	400	Vdc
EmitterBase Voltage	V_EBO	5	Vdc
CollectorEmitter Voltage - 1.5 V	V_CEX	400	Vdc
Collector Current - Continuous - Peak (1)	I_C	16 30	Adc
Base Current - Continuous	I_B	5	Adc
Total Power Dissipation @ T_C = 25 Derate Above 25	P_D	250 1.43	Watts W/
Operating and Storage Junction Temperature Range	T_J, T_stg	65 to +200

MJ21196 Typical Application

• Total Harmonic Distortion Characterized
• High DC Current Gain hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second

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