MJ21196

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 250 V
Maximum DC Collector Current : 16 A
Maximum Operating Frequency : 4 MHz (Min)


Application

• Total Harmonic Distortion Characterized
• High DC Current Gain hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	250	Vdc
CollectorBase Voltage	VCBO	400	Vdc
EmitterBase Voltage	VEBO	5	Vdc
CollectorEmitter Voltage - 1.5 V	VCEX	400	Vdc
Collector Current - Continuous - Peak (1)	IC	16 30	Adc
Base Current - Continuous	IB	5	Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	250 1.43	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200

Parameters:

Technical/Catalog Information	MJ21196
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	16A
Power - Max	250W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 8A, 5V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 800mA, 8A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ21196 MJ21196 MJ21196OS ND MJ21196OSND MJ21196OS