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MJ15015G, MJ15016, MJ15018

MJ15015G, MJ15016, MJ15018 Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:N/A  D/C:08+/09+

MJ15015G Picture

MJ15015G, MJ15016, MJ15018 Datasheet download

Five Points

Part Number: MJ15015G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: N/A

D/C: 08+/09+

Description: TRANS PWR PNP 15A 120V TO3

 

 
 
 
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MJ15015G Suppliers

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  • MJ1000

  • Pack: TO Qty: 5000  Adddate: 2024-05-23
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • MJ10000

  • Pack: TO Qty: 5000  Adddate: 2024-05-23
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)

About MJ1000

PDF/DataSheet Download

Datasheet: MJ1000

File Size: 142616 KB

Manufacturer: CENTRAL [Central Semiconductor Corp]

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MJ15016 Suppliers

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  • MJ15016

  • Pack: TO Qty: 5000  Adddate: 2024-05-23
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • MJ15016

  • Vendor: ON D/C: 07+&   Adddate: 2024-05-23
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  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)

About MJ15016

PDF/DataSheet Download

Datasheet: MJ15016

File Size: 205558 KB

Manufacturer: MOSPEC [Mospec Semiconductor]

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MJ15018 Suppliers

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  • MJ15018

  • Pack: TO Qty: 5000  Adddate: 2024-05-23
  • Inquire Now
  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • MJ1000

  • Pack: TO Qty: 5000  Adddate: 2024-05-23
  • Inquire Now
  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)

About MJ15018

PDF/DataSheet Download

Datasheet: MJ15018

File Size: 138756 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MJ15015G Parameters

Technical/Catalog InformationMJ15015G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)15A
Power - Max115W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic1.1V @ 400mA, 4A
Frequency - Transition6MHz
Current - Collector Cutoff (Max)700A
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJ15015G
MJ15015G
MJ15015GOS ND
MJ15015GOSND
MJ15015GOS

MJ15016 Parameters

Technical/Catalog InformationMJ15016
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)15A
Power - Max115W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 4A, 2V
Vce Saturation (Max) @ Ib, Ic1.1V @ 400mA, 4A
Frequency - Transition6MHz
Current - Collector Cutoff (Max)700A
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJ15016
MJ15016
MJ15016OS ND
MJ15016OSND
MJ15016OS

MJ15016 General Description

These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055.

MJ15016 Maximum Ratings

Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N3055A
MJ15015, MJ15016
VCEO
60
120
Vdc
Collector−Base Voltage
2N3055A
MJ15015, MJ15016
VCBO
100
200
Vdc
Collector−Emitter Voltage Base
Reversed Biased 2N3055A
MJ15015, MJ15016
VCEV
100
200
Vdc
Emitter−Base Voltage
VEBO
7.0
Vdc
Collector Current − Continuous
IC
15
Adc
Base Current
IB
7.0
Adc
Total Device Dissipation @ TC = 25
Derate above 25 2N3055A
Total Device Dissipation @ TC = 25
Derate above 25
MJ15015, MJ15016
PD
115
0.65
180
1.03
W
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +200

MJ15016 Features

• Current−Gain − Bandwidth−Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) − NPN = 2.2 MHz (Min) − PNP
• Safe Operating Area − Rated to 60 V and 120 V, Respectively
• Pb−Free Packages are Available*

MJ15018 Maximum Ratings

Rating
Symbol
MJ15018
MJ15019
MJ15020
MJ15021
Unit
CollectorEmitter Voltage
VCEO
200
250
Vdc
CollectorBase Voltage
VCBO
200
250
Vdc
EmitterBase Voltage
VEBO
7.0
Vdc
Collector Current - Continuous
IC
4.0
Adc
Base Current - Continuous
IB
2.0
Adc
Emitter Current - Continuous
IE
6.0
Adc
Total Power Dissipation @ TC = 25
Derate above 25
PD
150
0.86
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200

MJ15018 Features

• High Gain Complementary Silicon Power Transistors
• Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec.
• Excellent Frequency Response - fT = 20 MHz min.

MJ15018 Typical Application

• High Gain Complementary Silicon Power Transistors
• Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec.
• Excellent Frequency Response - fT = 20 MHz min.

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