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Total Power Dissipation @ TC = 25 Derate above 25C @ TC = 100
PD
300 1.71
Watts W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +200
MJ11030 Typical Application
• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor • Junction Temperature to +200C
MJ11031 Maximum Ratings
Rating
Symbol
MJ11028 MJ11029
MJ11030 MJ11031
MJ11032 MJ11033
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCB
60
90
120
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current - Continuous Peak
IC ICM
50 100
Adc
Base Current - Continuous
IB
2
Adc
Total Power Dissipation @ TC = 25 Derate above 25C @ TC = 100
PD
300 1.71
Watts W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +200
MJ11031 Typical Application
• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor • Junction Temperature to +200C
Total Power Dissipation @ TC = 25 Derate above 25C @ TC = 100
PD
300 1.71
Watts W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +200
MJ11032 Typical Application
• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor • Junction Temperature to +200C