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MJ11030, MJ11031, MJ11032

MJ11030, MJ11031, MJ11032 Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-3  D/C:00+

MJ11030 Picture

MJ11030, MJ11031, MJ11032 Datasheet download

Five Points

Part Number: MJ11030

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-3

D/C: 00+

Description: TRANS DARL NPN 50A 120V TO3

 

 
 
 
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MJ11030 Suppliers

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  • MJ11030

  • Pack: TO Qty: 5000  Adddate: 2024-06-05
  • Inquire Now
  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • MJ11030G

  • Vendor: ON Pack: TO Qty: 50000 Note: Bipolar Power NPN, 50 A, 90 V  Adddate: 2024-06-05
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  • Koyu Technology (HK) Co,.Ltd   China
    Contact: Ms.Selina  
    Tel: 86-0755-8338 3611
    Fax: --
    (7)
  • MJ1000

  • Pack: TO Qty: 5000  Adddate: 2024-06-05
  • Inquire Now
  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)

About MJ11030

PDF/DataSheet Download

Datasheet: MJ11030

File Size: 157671 KB

Manufacturer: MOSPEC [Mospec Semiconductor]

Download : Click here to Download

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MJ11031 Suppliers

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  • MJ11031

  • Pack: TO Qty: 5000  Adddate: 2024-06-05
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  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • MJ1000

  • Pack: TO Qty: 5000  Adddate: 2024-06-05
  • Inquire Now
  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)

About MJ11031

PDF/DataSheet Download

Datasheet: MJ11031

File Size: 157671 KB

Manufacturer: MOSPEC [Mospec Semiconductor]

Download : Click here to Download

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MJ11032 Suppliers

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  • MJ11032

  • Pack: TO Qty: 5000  Adddate: 2024-06-05
  • Inquire Now
  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • MJ11032

  • Vendor: ON Pack: SOP D/C: 10+& Qty: 5000 Note: new and original  Adddate: 2024-06-05
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  • Xinyee International Company   China
    Contact: Ms.BettyLin   MSN:xinyee2008@hotmail.com
    Tel: 0086-0755-83181759
    Fax: 0086-0755-83181759
    (85)
  • MJ11032

  • Vendor: ON Pack: TO D/C: 09+& Qty: 1000 Note: New original stock  Adddate: 2024-06-05
  • Inquire Now
  • shengdahexiangdongliu   China
    Contact: Mr.li  
    Tel: 86-0755-1397271067
    Fax:
    (9)

About MJ11032

PDF/DataSheet Download

Datasheet: MJ11032

File Size: 157671 KB

Manufacturer: MOSPEC [Mospec Semiconductor]

Download : Click here to Download

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MJ11030 Parameters

Technical/Catalog InformationMJ11030
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)90V
Current - Collector (Ic) (Max)50A
Power - Max300W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Vce Saturation (Max) @ Ib, Ic2.5V @ 250mA, 25A
Frequency - Transition-
Current - Collector Cutoff (Max)2mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJ11030
MJ11030

MJ11030 Maximum Ratings

Rating
Symbol
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCB
60
90
120
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current - Continuous
Peak
IC
ICM
50
100
Adc
Base Current - Continuous
IB
2
Adc
Total Power Dissipation @ TC = 25
Derate above 25C @ TC = 100
PD
300
1.71
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200

MJ11030 Typical Application

• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
• Junction Temperature to +200C

MJ11031 Maximum Ratings

Rating
Symbol
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCB
60
90
120
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current - Continuous
Peak
IC
ICM
50
100
Adc
Base Current - Continuous
IB
2
Adc
Total Power Dissipation @ TC = 25
Derate above 25C @ TC = 100
PD
300
1.71
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200

MJ11031 Typical Application

• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
• Junction Temperature to +200C

MJ11032 Parameters

Technical/Catalog InformationMJ11032
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)50A
Power - Max300W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Vce Saturation (Max) @ Ib, Ic2.5V @ 250mA, 25A
Frequency - Transition-
Current - Collector Cutoff (Max)2mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJ11032
MJ11032
MJ11032OS ND
MJ11032OSND
MJ11032OS

MJ11032 Maximum Ratings

Rating
Symbol
MJ11028
MJ11029
MJ11030
MJ11031
MJ11032
MJ11033
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCB
60
90
120
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current - Continuous
Peak
IC
ICM
50
100
Adc
Base Current - Continuous
IB
2
Adc
Total Power Dissipation @ TC = 25
Derate above 25C @ TC = 100
PD
300
1.71
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200

MJ11032 Typical Application

• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
• Junction Temperature to +200C

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