MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:2005
MJ11016, MJ11016G, MJ11017 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: TO-3P
D/C: 2005
Description: TRANS DARL NPN 30A 120V TO3
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PDF/DataSheet Download
Datasheet: MJ11016
File Size: 20471 KB
Manufacturer: MOSPEC [Mospec Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MJ1000
File Size: 142616 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MJ11017
File Size: 240723 KB
Manufacturer: MOSPEC [Mospec Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | MJ11016 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 30A |
| Power - Max | 200W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Frequency - Transition | 4MHz |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Chassis Mount |
| Package / Case | TO-204, TO-3 |
| Packaging | Tray |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJ11016 MJ11016 MJ11016OS ND MJ11016OSND MJ11016OS |
|
Rating |
Symbol |
MJ11012 |
MJ11013 MJ11014 |
MJ11015 MJ11016 |
Unit |
| CollectorEmitter Voltage |
VCEO |
60 |
90 |
120 |
Vdc |
| Collector Base Voltage |
VCBO |
60 |
90 |
120 |
Vdc |
| EmitterBase Voltage |
VEBO |
5 |
Vdc | ||
| Collector Current |
IC |
30 |
Adc | ||
| Base Current |
IB |
1 |
Adc | ||
| Total Device Dissipation @TC = 25 Derate above 25 @ TC = 100 |
PD |
200 |
Watts W/ | ||
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
55 to +200 |
|||
| Technical/Catalog Information | MJ11016G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 30A |
| Power - Max | 200W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Frequency - Transition | 4MHz |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Chassis Mount |
| Package / Case | TO-204, TO-3 |
| Packaging | Tray |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MJ11016G MJ11016G MJ11016GOS ND MJ11016GOSND MJ11016GOS |
• High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)
• CollectorEmitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJ11018, 17 VCEO(sus) = 250 Vdc (Min) MJ11022, 21
• Low CollectorEmitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
|
Rating |
Symbol |
MJ15023 |
MJ15025 |
Unit |
| CollectorEmitter Voltage |
VCEO |
150 |
250 |
Vdc |
| Collector Base Voltage |
VCB |
150 |
250 |
Vdc |
| EmitterBase Voltage |
VEB |
50 |
Vdc | |
| Collector Current - Continuous Peak |
IC |
15 30 |
vdc | |
| Base Current |
IB |
0.5 |
Adc | |
| Total Power Dissipation @ TC = 25 B@ TC = 100 Derate above 25 |
PD |
175 |
Watts W/ | |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +175 65 to +200 |
||
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