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The MA02203AD is a two stage power amplifier designed for DECT applications to have an output power of +26.5 dBm with an input power of 2 dBm. This power amplifier operates at +3.6 volts with 35% typical power added efficiency.
The 02203AD is mounted in a narrow body 16-pin SOIC plastic package. The MA02203AD is fabricated using M/A-COM's self-aligned MSAG®-Lite MESFET process for a low single supply voltage, high power efficiency, and excellent reliability.
This part is not recommended for new designs. M/ACOM's MA02206GJ has superior RF performance with less DC power consumption in a smaller package. Pricing on the MA02206GJ is also less than the MA02203AD.
MA02203AD Maximum Ratings
arameter
Absolute Maximum
Max Input Power
+6 dBm
Operating Voltages
+5.5 volts
Operating Temperature, Ts
-40 to +70
Channel Temperature
+150
Storage Temperature
-40 to +150
1. Exceeding any one or combination of these limits may cause permanent damage.
MA02203AD Features
· Ideal for DECT Applications · +26.5 dBm Output Power · 24.5 dB Power Gain · Single Positive Supply · Class A Bias · No External RF Matching Required
MA02203AD Connection Diagram
MA02206GJ General Description
The MA02206GJ is a DECT Power amplifier based on M/A-COM's Self-Aligned MSAG MESFET Process. This product is designed for use in 3.6 V DECT handsets and base stations.
MA02206GJ Maximum Ratings
Rating
Symbol
Value
Unit
DC Supply Voltage
VDD
6.0
V
RF Input Power
PIN
10
mW
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-40 to +150
Operating Temperature Range
TOPER
-40 to +100
Moisture Sensitivity
JEDEC Level 1
MA02206GJ Features
• Single Positive Supply • 57% Power Added Efficiency • Operation down to 1.2 V • 100% Duty Cycle • 1800 to 2000 MHz Operation • 8 Pin Full Downset MSOP Plastic Package • Accommodates Battery Charging Conditions up to 5.6 Volts • Self-Aligned MSAG® -Lite MESFET Process