Features: • 8.5 to 12 GHz Operation• 10W CW Power Handling Capability• 50 Input Impedance• Excellent Return Loss• Self-Aligned MSAG® MESFET ProcessSpecifications Rating Symbol Value Unit DC Drain Supply Voltage VDD 8 Vdc DC Gate Supply Voltage VG...
MA01502D: Features: • 8.5 to 12 GHz Operation• 10W CW Power Handling Capability• 50 Input Impedance• Excellent Return Loss• Self-Aligned MSAG® MESFET ProcessSpecifications ...
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• 8.5 to 12 GHz Operation
• 10W CW Power Handling Capability
• 50 Input Impedance
• Excellent Return Loss
• Self-Aligned MSAG® MESFET Process
Rating | Symbol | Value | Unit |
DC Drain Supply Voltage | VDD | 8 | Vdc |
DC Gate Supply Voltage | VGG | -6 | Vdc |
RF Input Power | PIN | 15 | W |
Junction Temperature | TJ | 150 | |
Storage Temperature | TSTG | -40 to +150 |
The MA01502D is a balanced, two-stage low noise amplifier and limiter die fabricated using M/A-COM's mature GaAs Self-Aligned MSAG® MESFET Process. This product is fully matched to 50 ohms on both the input and the output.