M74HCT125, M74HCT125RM013TR, M74HCT126M1 Selling Leads, Datasheet
MFG:ST Package Cooled:3.9MM D/C:03+
M74HCT125, M74HCT125RM013TR, M74HCT126M1 Datasheet download
Part Number: M74HCT125
MFG: ST
Package Cooled: 3.9MM
D/C: 03+
MFG:ST Package Cooled:3.9MM D/C:03+
M74HCT125, M74HCT125RM013TR, M74HCT126M1 Datasheet download
MFG: ST
Package Cooled: 3.9MM
D/C: 03+
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PDF/DataSheet Download
Datasheet: M74HCT125
File Size: 172399 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M74AC574B
File Size: 83392 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M74AC574B
File Size: 83392 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The M74HCT125 is an high speed CMOS QUAD BUFFER (3-STATE) fabricated with silicon gate C2MOS technology.
The device requires the 3-STATE control input G to be set high to place the output in to the high impedance state.
The M74HCT125 is designed to directly interface HSC2MOS systems with TTL and NMOS components.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
Symbol | Parameter | Value | Unit |
VCC | Supply Voltage | -0.5 to +7 | V |
VI | DC Input Voltage | -0.5 to VCC + 0.5 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | ± 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | ± 25 | mA |
ICC or IGND | DC VCC or Ground Current | ± 50 | mA |
PD | Power Dissipation | 500(*) | mW |
Tstg | Storage Temperature | -65 to +150 | °C |
TL | Lead Temperature (10 sec) | 300 | °C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C