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M74HC00

Features: `HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V`LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25`HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)` BALANCED PROPAGATION DELAYS: tPLH tPHL` WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V`P...

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SeekIC No. : 004407048 Detail

M74HC00: Features: `HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V`LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25`HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA...

M74HC00 Data Sheet

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Part Number:
M74HC00
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V
`LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25
`HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)
` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)
` BALANCED PROPAGATION DELAYS: tPLH  tPHL
` WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V
`PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 00


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCC Supply Voltage -0.5 to +7 V
VI DC Input Voltage -0.5 to VCC + 0.5 V
VO DC Output Voltage -0.5 to VCC + 0.5 V
IIK DC Input Diode Current ± 20 mA
IOK DC Output Diode Current ± 20 mA
IO DC Output Current ± 25 mA
ICC or IGND DC VCC or Ground Current ± 50 mA
PD Power Dissipation 500 (*) mW
Tstg Storage Temperature -65 to +150
TL Lead Temperature (10 sec) 300

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 ; derate to 300mW by 10mW/ from 65to 85


Description

The M74HC00 is an high speed CMOS QUAD 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.




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