Features: MULTIPLE MEMORY PRODUCT Two 64Mbit (8M x8 or 4M x16), Multiple Bank,Page, Boot Block, Flash Memories 32Mbit (2M x 16) Pseudo Static RAM SUPPLY VOLTAGE VCCF = VCCP = 2.7 to 3.3V VPPF = 12V for Fast Program (optional) ACCESS TIME: 70, 90ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE Manufa...
M74DW66500B: Features: MULTIPLE MEMORY PRODUCT Two 64Mbit (8M x8 or 4M x16), Multiple Bank,Page, Boot Block, Flash Memories 32Mbit (2M x 16) Pseudo Static RAM SUPPLY VOLTAGE VCCF = VCCP = 2.7 to 3.3V VPPF = 12V...
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Symbol |
Parameter |
Value |
Unit | |
Min |
Max | |||
TA |
Ambient Operating Temperature (1) |
40 |
85 |
°C |
TBIAS |
Temperature Under Bias |
50 |
125 |
°C |
TSTG |
Storage Temperature |
65 |
150 |
°C |
VIO |
Input or Output Voltage |
0.5 |
VCCF +0.3 |
V |
VCCF |
Flash Supply Voltage |
0.6 |
4 |
V |
VID |
Identification Voltage |
0.6 |
13.5 |
V |
VPPF |
Program Voltage |
0.6 |
13.5 |
V |
VCCP |
PSRAM Supply Voltage |
3.6 |
V |
The M74DW66500B is a low voltage Multiple Memory Product which combines two memory devices; a 64 Mbit Multiple Bank, Boot Block Flash memory (M29DW640D) and a 32 Mbit Pseudo SRAM. This document should be read in conjunction with the M29DW640D and M69AW048B datasheets.
Recommended operating conditions do not allow more than one of the internal memory devices to be active at the same time.
The memory of M74DW66500B is offered in an LFBGA73 (8 x 11.6mm, 0.8 mm pitch) package and is supplied with all the bits erased (set to '1').