M29W320EB90ZE6T, M29W320EC, M29W320ET Selling Leads, Datasheet
MFG:ST Package Cooled:TSSOP D/C:07+
M29W320EB90ZE6T, M29W320EC, M29W320ET Datasheet download
Part Number: M29W320EB90ZE6T
MFG: ST
Package Cooled: TSSOP
D/C: 07+
M29W320EB90ZE6T, M29W320EC, M29W320ET
- Table of contents:
Info of M29W320EB90ZE6T
Info of M29W320EC
Info of M29W320ET
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About M29W320EB90ZE6T
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Datasheet: M29W320EB90ZE6T
File Size: 908417 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About M2901V
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Datasheet: M2901V
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About M29W320ET
PDF/DataSheet Download
Datasheet: M29W320ET
File Size: 908417 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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M29W320ET General Description
The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The device features an asymmetrical block architecture. The M29W320E has an array of 8 parameter and 63 main blocks. M29W320ET locates the Parameter Blocks at the top of the memory address space while the M29W320EB locates the Parameter Blocks starting from the bottom.
The device features an asymmetrical block architecture. The M29W320E has an array of 8 parameter and 63 main blocks. M29W320ET locates the Parameter Blocks at the top of the memory address space while the M29W320EB locates the Parameter Blocks starting from the bottom.
M29W320ET Maximum Ratings
| Symbol | Parameter | Min | Max | Unit |
| TBIAS | Temperature Under Bias | 50 | 125 | °C |
| TSTG | Storage Temperature | 65 | 150 | °C |
| TLEAD | Lead Temperature during Soldering(1) | 260(2) | °C | |
| VIO | Input or Output Voltage (3,4) | 0.6 | VCC +0.6 | V |
| VCC | Supply Voltage | 0.6 | 4 | V |
| VID | Identification Voltage | 0.6 | 13.5 | V |
| VPP(5) | Program Voltage | 0.6 | 13.5 | V |
M29W320ET Features
SUPPLY VOLTAGE
VCC = 2.7V to 3.6V for Program, Erase and Read
VPP =12V for Fast Program (optional)
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
10µs per Byte/Word typical
Double Word/ Quadruple Byte Program
MEMORY BLOCKS
Memory Array: 63 Main Blocks
8 Parameter Blocks (Top or Bottom Location)
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
EXTENDED MEMORY BLOCK
Extra block used as security block or to store additional information
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W320ET: 2256h
Bottom Device Code M29W320EB: 2257h
VCC = 2.7V to 3.6V for Program, Erase and Read
VPP =12V for Fast Program (optional)
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
10µs per Byte/Word typical
Double Word/ Quadruple Byte Program
MEMORY BLOCKS
Memory Array: 63 Main Blocks
8 Parameter Blocks (Top or Bottom Location)
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
EXTENDED MEMORY BLOCK
Extra block used as security block or to store additional information
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W320ET: 2256h
Bottom Device Code M29W320EB: 2257h
M29W320ET Connection Diagram
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