M29F200BT90N3T, M29F200BT90N6T, M29F200T Selling Leads, Datasheet
MFG:ST Package Cooled:TSSOP D/C:07+
M29F200BT90N3T, M29F200BT90N6T, M29F200T Datasheet download
Part Number: M29F200BT90N3T
MFG: ST
Package Cooled: TSSOP
D/C: 07+
M29F200BT90N3T, M29F200BT90N6T, M29F200T
- Table of contents:
Info of M29F200BT90N3T
Info of M29F200BT90N6T
Info of M29F200T
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About M29F200BT90N3T
PDF/DataSheet Download
Datasheet: M29F200BT90N3T
File Size: 149827 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About M29F200BT90N6T
PDF/DataSheet Download
Datasheet: M29F200BT90N6T
File Size: 149827 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About M29F200T
PDF/DataSheet Download
Datasheet: M29F200T
File Size: 230348 KB
Manufacturer: STMicro
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M29F200T General Description
The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby- Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application.
M29F200T Maximum Ratings
|
Parameter |
Value |
SYMBOL |
UNIT |
|
Ambient Operating Temperature (Temperature Range Option 3) |
40 to 125 |
TA |
°C
|
|
Temperature Under Bias |
50 to 125 |
TBIAS |
°C |
|
Storage Temperature |
65 to 150 |
TSTG |
|
|
Input or Output Voltage |
0.6 to 6 |
VIO(2) |
V |
|
Supply Voltage |
0.6 to 6 |
VCC |
V |
|
A9, E, G, RP Voltage |
0.6 to 13.5 |
V(A9, E, G, RP)(2) |
V |
Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table AbsoluteMaximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not i mplied. Exposure to Absolute MaximumRating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and otherrelevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
3. Depends on range.
M29F200T Features
5V±10% SUPPLYVOLTAGEfor PROGRAM,
ERASE and READ OPERATIONS
FASTACCESS TIME: 55ns
FASTPROGRAMMING TIME
10ms by Byte / 16ms by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy Output
MEMORY BLOCKS
Boot Block (Top or Bottom location)
Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
Stand-byand Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARSDATARETENTION
Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code, M29F200T: 00D3h
ERASE and READ OPERATIONS
FASTACCESS TIME: 55ns
FASTPROGRAMMING TIME
10ms by Byte / 16ms by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy Output
MEMORY BLOCKS
Boot Block (Top or Bottom location)
Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
Stand-byand Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARSDATARETENTION
Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code, M29F200T: 00D3h
M29F200T Connection Diagram
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