M29F080B-90EI, M29F080D, M29F080D 70M6 Selling Leads, Datasheet
MFG:AMD Package Cooled:TSSOP D/C:08+
M29F080B-90EI, M29F080D, M29F080D 70M6 Datasheet download
Part Number: M29F080B-90EI
MFG: AMD
Package Cooled: TSSOP
D/C: 08+
M29F080B-90EI, M29F080D, M29F080D 70M6
- Table of contents:
Info of M29F080B-90EI
Info of M29F080D
Info of M29F080D 70M6
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About M2901V
PDF/DataSheet Download
Datasheet: M2901V
File Size: 149016 KB
Manufacturer:
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About M29F080D
PDF/DataSheet Download
Datasheet: M29F080D
File Size: 258114 KB
Manufacturer: STMicroelectronics
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About M2901V
PDF/DataSheet Download
Datasheet: M2901V
File Size: 149016 KB
Manufacturer:
Download : Click here to Download
M29F080D General Description
The M29F080D is a 8 Mbit (1Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into 16 uniform blocks of 64Kbytes (see Figure 5, Block Addresses) that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in groups of 4 to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.
The memory is offered in TSOP40 (10 x 20mm) and SO44 packages. Access times of 55, 70 and 90ns are available. The memory is supplied with all the bits erased (set to '1').
M29F080D Maximum Ratings
|
Symbol |
Parameter |
Min |
Max |
Unit |
|
TBIAS |
Temperature Under Bias |
50 |
125 |
°C |
|
TSTG |
Storage Temperature |
65 |
150 |
°C |
|
VIO |
Input or Output Voltage(1) |
0.6 |
VCC +0.6 |
V |
|
VCC |
Read Supply Voltage |
0.6 |
6 |
V |
|
VID |
Identification Voltage |
0.6 |
13.5 |
V |
M29F080D Features
SUPPLY VOLTAGE
VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55, 70, 90ns
PROGRAMMING TIME
10s per Byte typical
16 UNIFORM 64Kbyte MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
Embedded Byte Program algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code: F1h
VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55, 70, 90ns
PROGRAMMING TIME
10s per Byte typical
16 UNIFORM 64Kbyte MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
Embedded Byte Program algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
64 bit Security Code
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Code: F1h
M29F080D Connection Diagram
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