LP750, LP7510, LP7608 Selling Leads, Datasheet
MFG:FILTRONIC Package Cooled:SOT892 D/C:08+
LP750, LP7510, LP7608 Datasheet download
Part Number: LP750
MFG: FILTRONIC
Package Cooled: SOT892
D/C: 08+
LP750, LP7510, LP7608
- Table of contents:
Info of LP750
Info of LP7510
Info of LP7608
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About LP750
PDF/DataSheet Download
Datasheet: LP750
File Size: 35186 KB
Manufacturer: FILTRONIC [Filtronic Compound Semiconductors]
Download : Click here to Download
About LP7510
PDF/DataSheet Download
Datasheet: LP7510
File Size: 2617779 KB
Manufacturer: ETC
Download : Click here to Download
About LP701
PDF/DataSheet Download
Datasheet: LP701
File Size: 36192 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
LP750 General Description
`The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 750m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si3N4 passivation and is available in a variety of packages, including SOT89 and P100 packages.
`Typical applications include commercial and other types of high-performance power amplifiers, including use within SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.
`Typical applications include commercial and other types of high-performance power amplifiers, including use within SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.
LP750 Maximum Ratings
|
Parameter |
Symbol |
Test Conditions |
Max |
Units | |
|
Drain-Source Voltage |
VDS |
TAmbient = 22 ± 3 |
12 |
V | |
|
Gate-Source Voltage |
VGS |
TAmbient = 22 ± 3 |
4 |
V | |
|
Drain-Source Current |
IDS |
TAmbient = 22 ± 3 |
2xIDSS |
mA | |
|
Gate Current |
IG |
TAmbient = 22 ± 3 |
7.5 |
mA | |
|
RF Input Power |
PIN |
TAmbient = 22 ± 3 |
300 |
mW | |
|
Channel Operating Temperature |
TCH |
TAmbient = 22 ± 3 |
175 |
||
|
Storage Temperature |
TSTG |
- |
-65 |
175 |
|
|
Total Power Dissipation |
PTOT |
TAmbient = 22 ± 3 |
2.2 |
W |
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT º (PDC + PIN) POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
PTOT= 2.2W (0.015W/) x THS
where THS = heatsink or ambient temperature.
LP750 Features
· 28 dBm Output Power at 1-dB Compression at 18 GHz
· 10 dB Power Gain at 18 GHz
· 24 dBm Output Power at 1-dB Compression at 3.3V
· 55% Power-Added Efficiency
· 10 dB Power Gain at 18 GHz
· 24 dBm Output Power at 1-dB Compression at 3.3V
· 55% Power-Added Efficiency
LP750 Typical Application
·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.
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