LP750

Features:

 · 28 dBm Output Power at 1-dB Compression at 18 GHz
 · 10 dB Power Gain at 18 GHz
 · 24 dBm Output Power at 1-dB Compression at 3.3V
 · 55% Power-Added Efficiency


Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter	Symbol	Test Conditions		Max	Units
Drain-Source Voltage	VDS	TAmbient = 22 ± 3		12	V
Gate-Source Voltage	VGS	TAmbient = 22 ± 3		4	V
Drain-Source Current	IDS	TAmbient = 22 ± 3		2xIDSS	mA
Gate Current	IG	TAmbient = 22 ± 3		7.5	mA
RF Input Power	PIN	TAmbient = 22 ± 3		300	mW
Channel Operating Temperature	TCH	TAmbient = 22 ± 3		175
Storage Temperature	TSTG	-	-65	175
Total Power Dissipation	PTOT	TAmbient = 22 ± 3		2.2	W

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: P_TOT º (P_DC + P_IN) P_OUT, where
                                                    P_DC: DC Bias Power
                                                    P_IN: RF Input Power
                                                    P_OUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
                                                    P_TOT= 2.2W (0.015W/) x T_HS
                                                    where T_HS = heatsink or ambient temperature.


Description

`The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 750m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si₃N₄ passivation and is available in a variety of packages, including SOT89 and P100 packages.

`Typical applications include commercial and other types of high-performance power amplifiers, including use within SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.