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LP750SOT89

Features: · 26 dBm Output Power at 1-dB Compression at 1.8 GHz· 17 dB Power Gain at 1.8 GHz· 0.7 dB Noise Figure· 40 dBm Output IP3 at 1.8 GHz· 55% Power-Added EfficiencyApplication·Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other ty...

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LP750SOT89: Features: · 26 dBm Output Power at 1-dB Compression at 1.8 GHz· 17 dB Power Gain at 1.8 GHz· 0.7 dB Noise Figure· 40 dBm Output IP3 at 1.8 GHz· 55% Power-Added EfficiencyApplication·Typical applicat...

LP750SOT89 Data Sheet

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Part Number:
LP750SOT89
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 26 dBm Output Power at 1-dB Compression at 1.8 GHz
· 17 dB Power Gain at 1.8 GHz
· 0.7 dB Noise Figure
· 40 dBm Output IP3 at 1.8 GHz
· 55% Power-Added Efficiency


Application

·Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems.FONT>


Specifications

Parameter

Symbol

Test Conditions

 

Max

Units

Drain-Source Voltage

VDS

TAmbient = 22 ± 3

 

7

V

Gate-Source Voltage

VGS

TAmbient = 22 ± 3

 

-3

V

Drain-Source Current

IDS

TAmbient = 22 ± 3

 

2xIDSS

mA

Gate Current

IG

TAmbient = 22 ± 3

 

7.5

mA

RF Input Power

PIN

TAmbient = 22 ± 3

 

175

mW

Channel Operating Temperature

TCH

TAmbient = 22 ± 3

 

175

Storage Temperature

TSTG

-

-65

175

Total Power Dissipation

PTOT

TAmbient = 22 ± 3

 

1.75

W

Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT º (PDC + PIN) POUT, where
                                                    PDC: DC Bias Power
                                                    PIN: RF Input Power
                                                    POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25:
                                             PTOT= 1.75W (0.012W/) x TPACK
                                             where TPACK = source tab lead temperature
` This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.


Description

`The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si3N4 passivation and is available in die form or in other packages.



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