LD1010SD-TR, LD1014D, LD101A1R00K Selling Leads, Datasheet
MFG:LOVOLTECH Package Cooled:2009+ROHS D/C:2009+
LD1010SD-TR, LD1014D, LD101A1R00K Datasheet download
Part Number: LD1010SD-TR
MFG: LOVOLTECH
Package Cooled: 2009+ROHS
D/C: 2009+
MFG:LOVOLTECH Package Cooled:2009+ROHS D/C:2009+
LD1010SD-TR, LD1014D, LD101A1R00K Datasheet download
MFG: LOVOLTECH
Package Cooled: 2009+ROHS
D/C: 2009+
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PDF/DataSheet Download
Datasheet: LD1003S
File Size: 710068 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: LD1014D
File Size: 656046 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: LD1003S
File Size: 710068 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required.
This product has tin plated leads.
Parameter |
Symbol |
Ratings |
Units |
Drain-Source Voltage |
VDS |
24 |
V |
Gate-Source Voltage |
VGS |
-12 |
V |
Gate-Drain Voltage |
VGD |
-28 |
V |
Continuous Drain Current |
ID |
501 |
A |
Pulsed Drain Current |
ID |
100 |
A |
Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 ) |
EAS |
200 |
mJ |
Junction Temperature |
TJ |
-55 to 150°C |
°C |
Storage Temperature |
TSTG |
-65 to 150°C |
°C |
Lead Soldering Temperature, 10 seconds |
T |
260°C |
°C |
Power Dissipation (Derated at 25°C) |
PD |
69 |
W |