Features: Superior gate charge x Rdson product (FOM) Trench Power JFET with low threshold voltage Vth.Device fully ON with Vgs = 0.7VOptimum for Low Side Buck Converters Excellent for high frequency dc/dc convertersOptimized for Secondary Rectification in isolated DC-DCLow Rg and low Cds for h...
LD1014D: Features: Superior gate charge x Rdson product (FOM) Trench Power JFET with low threshold voltage Vth.Device fully ON with Vgs = 0.7VOptimum for Low Side Buck Converters Excellent for high frequ...
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Parameter |
Symbol |
Ratings |
Units |
Drain-Source Voltage |
VDS |
24 |
V |
Gate-Source Voltage |
VGS |
-12 |
V |
Gate-Drain Voltage |
VGD |
-28 |
V |
Continuous Drain Current |
ID |
501 |
A |
Pulsed Drain Current |
ID |
100 |
A |
Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 ) |
EAS |
200 |
mJ |
Junction Temperature |
TJ |
-55 to 150°C |
°C |
Storage Temperature |
TSTG |
-65 to 150°C |
°C |
Lead Soldering Temperature, 10 seconds |
T |
260°C |
°C |
Power Dissipation (Derated at 25°C) |
PD |
69 |
W |
The Power JFET transistor LD1014D from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required.
LD1014D has tin plated leads.