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L223H3V1, L225, L2252-204

Table of contents:
Info of L223H3V1
Info of L225
Info of L2252-204

L223H3V1, L225, L2252-204 Selling Leads, Datasheet

MFG:INTEL Package Cooled:SOT23-5 D/C:08+

L223H3V1, L225, L2252-204 Datasheet download

Five Points

Part Number: L223H3V1

MFG: INTEL

Package Cooled: SOT23-5

D/C: 08+

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L225 General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"^TM process features low feedback and output capacitances resulting in high F_t transistors with high input impedance and high efficiency.

L225 Maximum Ratings

Total Device Dissipation	Total Device Dissipation	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Drain to Source Voltage
50 Watts	3.40 /W	200	-65to15	5.0A	36V	36V	20V

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