Specifications Total DeviceDissipation Total DeviceDissipation MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Drain toSourceVoltage 50 Watts 3.40 /W 200 -65to15 5.0A 36V 36V 20VDescrip...
L225: Specifications Total DeviceDissipation Total DeviceDissipation MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Dra...
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Total Device Dissipation |
Total Device Dissipation |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Drain to Source Voltage |
50 Watts |
3.40 /W |
200 |
-65to15 |
5.0A |
36V |
36V |
20V |
Silicon VDMOS and LDMOS transistors L225 designed specifically for broadband RF applications. L225 Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"TM process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.