L225

Specifications Total DeviceDissipation Total DeviceDissipation MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Drain toSourceVoltage 50 Watts 3.40 /W 200 -65to15 5.0A 36V 36V 20VDescrip...

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SeekIC No. : 004389004 Detail

L225: Specifications Total DeviceDissipation Total DeviceDissipation MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Dra...

floor Price/Ceiling Price

Part Number:
L225
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

Total
Device
Dissipation
Total
Device
Dissipation
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Drain to
Source
Voltage
50 Watts
3.40 /W


200
-65to15
5.0A
36V
36V
20V



Description

     Silicon VDMOS and LDMOS  transistors L225 designed specifically  for broadband RF applications.  L225 Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.  
 
     "Polyfet"TM   process features low feedback and output capacitances resulting in high F t transistors  with high input impedance and high efficiency.




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