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KFG1G16Q2M-DEB5, KFG1G16U2M-DIB5, KFG2816Q1M-DE80

Table of contents:
Info of KFG1G16Q2M-DEB5
Info of KFG1G16U2M-DIB5
Info of KFG2816Q1M-DE80

KFG1G16Q2M-DEB5, KFG1G16U2M-DIB5, KFG2816Q1M-DE80 Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:BGA D/C:06+

KFG1G16Q2M-DEB5, KFG1G16U2M-DIB5, KFG2816Q1M-DE80 Picture

KFG1G16Q2M-DEB5, KFG1G16U2M-DIB5, KFG2816Q1M-DE80 Datasheet download

Five Points

Part Number: KFG1G16Q2M-DEB5

MFG: SAMSUNG

Package Cooled: BGA

D/C: 06+

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KFG1G16Q2M-DEB5 Maximum Ratings

Parameter	Symbol	Rating	Unit
Voltage on any pin relative to VSS Vcc All Pins	Vcc V_IN	-0.5 to + 2.45	V
Temperature Under Bias Extended	T_bias	-30 to +125	°C
Storage Temperature	T_stg	-65 to +150	°C
Short Circuit Output Current	I_OS	5	mA
Recommended Operating Temperature	T_A (Extended Temp.)	-30 to +85	°C

NOTES:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V). Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

KFG1G16Q2M-DEB5 Features

• Design Technology:
• Supply Voltage:
• Host Interface:
• 5KB Internal BufferRAM:
• SLC NAND Array:
·Device Performance
• Host Interface Type:
• Programmable Burst Read Latency:
• Multiple Sector Read/Write:
• Multiple Reset Modes:
• Multi Block Erase:
• Low Power Dissipation:
·System Hardware
• Voltage detector generating internal reset signal from Vcc
• Hardware reset input (RP)
• Data Protection Modes
• User-controlled One Time Programmable(OTP) area
• Internal 2bit EDC / 1bit ECC
• Internal Bootloader supports Booting Solution in system
• Handshaking Feature
• Detailed chip information
·Packaging
• 1G products
• 2G DDP products
• 4G QDP products 90nm 1.8V (1.7V ~ 1.95V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64)B Page Size, (128K+4K)B Block Size
· Synchronous Burst Read
- Up to 54MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-words with wrap around
- Continuous 1K word Sequential Burst
Asynchronous Random Read
- 76ns access time Asynchronous Random Write Latency 3(up to 40MHz), 4, 5, 6, and 7 Up to 4 sectors using Sector Count Register Cold/Warm/Hot/NAND Flash Core Resets Up to 64 Blocks Typical Power,
- Standby current : 10uA @ Single , 20uA @ DDP, 40uA @ QDP
- Synchronous Burst Read current(54MHz) :12mA @ Single, 17mA @ DDP/QDP
- Load current : 30mA
- Program current : 25mA
- Erase current : 20mA
- Multi Block Erase current : 20mA
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register

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