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Offered in 64Mx8bit or 32Mx16bit, the K9K12XXX0C is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(K9K1216Q0C : 60ns) cycle time per byte (X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K12XXX0Cs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.The K9K12XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
K9K1208D0C Maximum Ratings
Parameter
Symbol
Rating
Unit
1.8V DEVICE
3.3V/2.65V DEVICE
-0.6 to + 2.45
-0.6 to + 4.6
Voltage on any pin relative to VSS
VIN/OUT
V
VCC
-0.2 to + 2.45
-0.6 to + 4.6
VCCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9F4G08U0M-XCB0
TBIAS
-10 to +125
K9F4G08U0M-XIB0
-40 to +125
Storage Temperature
K9F4G08U0M-XCB0
TSTG
-65 to +150
K9F4G08U0M-XIB0
Short Circuit Current
IOS
5
mA
NOTE : 1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K9K1208D0C Features
• Voltage Supply - 1.8V device(K9K12XXQ0C) : 1.70~1.95V - 2.65V device(K9F12XXD0C) : 2.4~2.9V - 3.3V device(K9K12XXU0C) : 2.7 ~ 3.6 V • Organization - Memory Cell Array - X8 device(K9K1208X0C) : (64M + 2048K)bit x 8 bit - X16 device(K9K1216X0C) : (32M + 1024 K)bit x 16bit - Data Register - X8 device(K9K1208X0C) : (512 + 16)bit x 8bit - X16 device(K9K1216X0C) : (256 + 8)bit x16bit • Automatic Program and Erase - Page Program - X8 device(K9K1208X0C) : (512 + 16)Byte - X16 device(K9K1216X0C) : (256 + 8)Word - Block Erase : - X8 device(K9K1208X0C) : (16K + 512)Byte - X16 device(K9K1216X0C) : ( 8K + 256)Word • Page Read Operation - Page Size - X8 device(K9K1208X0C) : (512 + 16)Byte - X16 device(K9K1216X0C) : (256 + 8)Word - Random Access : 10s(Max.) - Serial Page Access : 50ns(Min.)* *K9K1216Q0C : 60ns(Min.) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory • Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Intelligent Copy-Back • Unique ID for Copyright Protection • Package - K9K12XXX0C-GCB0/GIB0 63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm) - K9K12XXX0C-JCB0/JIB0 63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.2 mm) - Pb-free Package