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K9K1208QOC-HIBO, K9K1208QOC-JIBO, K9K1208U0A-YCB0

Table of contents:
Info of K9K1208QOC-HIBO
Info of K9K1208QOC-JIBO
Info of K9K1208U0A-YCB0

K9K1208QOC-HIBO, K9K1208QOC-JIBO, K9K1208U0A-YCB0 Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:BGA D/C:09+

K9K1208QOC-HIBO, K9K1208QOC-JIBO, K9K1208U0A-YCB0 Picture

K9K1208QOC-HIBO, K9K1208QOC-JIBO, K9K1208U0A-YCB0 Datasheet download

Five Points

Part Number: K9K1208QOC-HIBO

MFG: SAMSUNG

Package Cooled: BGA

D/C: 09+

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K9K1208U0A-YCB0 General Description

The K9K1208U0A are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528- byte page in typically 200s and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 60ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1208U0A¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1208U0A-YCB0/YIB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

K9K1208U0A-YCB0 Maximum Ratings

Parameter		Symbol	Rating	Unit
Voltage on any pin relative to V_SS		V_IN	-0.6 to + 4.6	V
		V_CC	-0.6 to + 4.6
Temperature Under Bias	K9K1208U0A-YCB0	T_BIAS	-10 to +125
	K9K1208U0A-YIB0		-40 to +125
Storage Temperature		T_STG	-65 to +150

NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V_CC,+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9K1208U0A-YCB0 Features

` Voltage Supply : 2.7V~3.6V
` Organization
   - Memory Cell Array : (64M + 2,048K)bit x 8bit
   - Data Register : (512 + 16)bit x8bit
` Automatic Program and Erase
   - Page Program : (512 + 16)Byte
   - Block Erase : (16K + 512)Byte
` 528-Byte Page Read Operation
   - Random Access : 10s(Max.)
   - Serial Page Access : 60ns(Min.)
` Fast Write Cycle Time
   - Program time : 200s(Typ.)
   - Block Erase Time : 2ms(Typ.)
` Command/Address/Data Multiplexed I/O Port
` Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
` Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years
` Command Register Operation
` Package :
   - K9K1208U0A-YCB0/YIB0 :
     48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

K9K1208U0A-YCB0 Connection Diagram

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