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The K9K1G08U0A is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200ms on the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation can be performed in typically 2ms on a 16K-byte(x8 device) or 8K-word(x16 device) block. Data in the data register can be read out at 50ns(1.8V device : 60ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command inputs. The onchip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1G08U0A¢s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
K9K1G08U0A Maximum Ratings
Parameter
Symbol
Rating
Unit
K9K1GXXQ0A(1.8V)
K9K1GXXU0A(3.3V)
Voltage on any pin relative to VSS
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
VCC
-0.2 to + 2.45
-0.6 to + 4.6
VCCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9K1GXXX0A-XCB0
TBIAS
-10 to +125
K9K1GXXX0A-XIB0
-40 to +125
Storage Temperature
K9K1GXXX0A-XCB0
TSTG
-65 to +150
K9K1GXXX0A-XIB0
Short Circuit Current
IOS
5
mA
NOTE : 1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K9K1G08U0A Features
· Voltage Supply - 1.8V device(K9K1GXXQ0A) : 1.70~1.95V - 3.3V device(K9K1GXXU0A) : 2.7 ~ 3.6 V · Organization - Memory Cell Array - X8 device(K9K1G08X0A) : (128M + 4096K)bit x 8 bit - X16 device(K9K1G16X0A) : (64M + 2048K)bit x 16bit - Data Register - X8 device(K9K1G08X0A) : (512 + 16)bit x 8bit - X16 device(K9K1G16X0A) : (256 + 8)bit x16bit · Automatic Program and Erase - Page Program - X8 device(K9K1G08X0A) : (512 + 16)Byte - X16 device(K9K1G16X0A) : (256 + 8)Word - Block Erase : - X8 device(K9K1G08X0A) : (16K + 512)Byte - X16 device(K9K1G16X0A) : ( 8K + 256)Word · Page Read Operation - Page Size - X8 device(K9K1G08X0A) : (512 + 16)Byte - X16 device(K9K1G16X0A) : (256 + 8)Word - Random Access : 12ms(Max.) - Serial Page Access : 50ns(Min.)* * K9F12XXQ0A : 60ns(Min.) · Fast Write Cycle Time - Program time : 200ms(Typ.) - Block Erase Time : 2ms(Typ.) · Command/Address/Data Multiplexed I/O Port · Hardware Data Protection - Program/Erase Lockout During Power Transitions · Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years · Command Register Operation · Intelligent Copy-Back · Unique ID for Copyright Protection · Package - K9K1GXXU0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9K1GXXX0A-GCB0/GIB0 63- Ball FBGA - K9K1G08U0A-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9K1GXXU0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch- Pb-free Package - K9K1GXXX0A -JCB0/JIB0 63 - Ball FBGA- Pb-free Package - K9K1G08U0A -FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9K1G08U0A-V,F(WSOPI ) is the same device as K9K1G08U0A-Y,P(TSOP1) except package type