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K4E151611C-TC60T00, K4E151611D, K4E151611D-50J

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Info of K4E151611C-TC60T00
Info of K4E151611D
Info of K4E151611D-50J

K4E151611C-TC60T00, K4E151611D, K4E151611D-50J Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:10728+ D/C:2000

K4E151611C-TC60T00, K4E151611D, K4E151611D-50J Picture

K4E151611C-TC60T00, K4E151611D, K4E151611D-50J Datasheet download

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Part Number: K4E151611C-TC60T00

MFG: SAMSUNG

Package Cooled: 10728+

D/C: 2000

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K4E151611D General Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung¢ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,personal computer and portable machines.

K4E151611D Maximum Ratings

Parameter	Symbol	Rating		Units
Parameter	Symbol	3.3V	5V	Units
Voltage on any pin relative to V_SS	V_IN,V_OUT	-0.5 to +4.6	-1.0 to +7.0	V
Voltage on VCC supply relative to V_SS	V_CC	-0.5 to +4.6	-1.0 to +7.0	V
Storage Temperature	T_stg	-55 to +150	-55 to +150	°C
Power Dissipation	P_D	1	1	W
Short Circuit Output Current	I_OS Address	50	50	mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

K4E151611D Features

• Part Identification
- K4E171611D-J(T) (5V, 4K Ref.)
- K4E151611D-J(T) (5V, 1K Ref.)
- K4E171612D-J(T) (3.3V, 4K Ref.)
- K4E151612D-J(T) (3.3V, 1K Ref.)
• Extended Data Out Mode operation (Fast Page Mode with Extended Data Out)
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)

K4E151611D Connection Diagram

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