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K4E640411D

Features: Part Identification - K4E660411D-JC(5.0V, 8K Ref., SOJ) - K4E640411D-JC(5.0V, 4K Ref., SOJ) - K4E660411D-TC(5.0V, 8K Ref., TSOP) - K4E640411D-TC(5.0V, 4K Ref., TSOP)Extended Data Out Mode operationCAS-before-RAS refresh capabilityRAS-only and Hidden refresh capabilityFast parallel test m...

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SeekIC No. : 004382712 Detail

K4E640411D: Features: Part Identification - K4E660411D-JC(5.0V, 8K Ref., SOJ) - K4E640411D-JC(5.0V, 4K Ref., SOJ) - K4E660411D-TC(5.0V, 8K Ref., TSOP) - K4E640411D-TC(5.0V, 4K Ref., TSOP)Extended Data Out Mode ...

K4E640411D Data Sheet

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Part Number:
K4E640411D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/20

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Product Details

Description



Features:

Part Identification
    - K4E660411D-JC(5.0V, 8K Ref., SOJ)
    - K4E640411D-JC(5.0V, 4K Ref., SOJ)
    - K4E660411D-TC(5.0V, 8K Ref., TSOP)
    - K4E640411D-TC(5.0V, 4K Ref., TSOP)
Extended Data Out Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
TTL(5.0V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
+5.0V±10% power supply 


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,VOUT
-1.0 to +7.0
V
Voltage on VCC supply relative to VSS
VCC
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS Address
50
mA



Description

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs K4E640411D. Extended Data Out Mode offers highspeed randomaccess of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -50, or -60), package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RASrefresh, RAS-only refresh and Hidden refresh capabilities.This 16Mx4 EDO Mode DRAM K4E640411D family is fabricated using Samsungs advanced CMOS process to realize high band-width, low powerconsumption and high reliability.




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