K1QZB1AD0014, K1S161611A, K1S161611A -FI70 Selling Leads, Datasheet
MFG:HIROSE Package Cooled:N/A D/C:N/A
K1QZB1AD0014, K1S161611A, K1S161611A -FI70 Datasheet download
Part Number: K1QZB1AD0014
MFG: HIROSE
Package Cooled: N/A
D/C: N/A
K1QZB1AD0014, K1S161611A, K1S161611A -FI70
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Info of K1QZB1AD0014
Info of K1S161611A
Info of K1S161611A -FI70
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About K1S161611A
PDF/DataSheet Download
Datasheet: K1S161611A
File Size: 183832 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
About K1S161611A
PDF/DataSheet Download
Datasheet: K1S161611A
File Size: 183832 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
K1S161611A General Description
The K1S161611A is fabricated by SAMSUNG's advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.
K1S161611A Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Voltage on any pin relative to Vss | VIN, VOUT | -0.2 to VCC+0.3V | V |
| Voltage on Vcc supply relative to Vss | VCC | -0.2 to 3.6V | V |
| Power Dissipation | PD | 1.0 | W |
| Storage temperature | TSTG | -65 to 150 | °C |
| Operating Temperature | TA | -40 to 85 | °C |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.
K1S161611A Features
· Process Technology: CMOS
· Organization: 1M x16 bit
· Power Supply Voltage: 2.7V~3.1V
· Three State Outputs
· Compatible with Low Power SRAM
· Dual Chip selection support
· Package Type: 48-FBGA-6.00x7.00
· Organization: 1M x16 bit
· Power Supply Voltage: 2.7V~3.1V
· Three State Outputs
· Compatible with Low Power SRAM
· Dual Chip selection support
· Package Type: 48-FBGA-6.00x7.00
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